FEATURES

Quasi-Resonant Operation

Output Power to 66 W

Low-Loss, Pulse-Ratio-Control Standby Mode

Temperature-Compensated Pulse-by-Pulse Over-Current Protection

Latched Over-Voltage and Thermal Protection

Under-Voltage Lockout with Hysteresis

Active Low-Pass Filter for Enhanced Light-Load Stability

Switched Attenuation of Leading-Edge Current-Sensing Signal

Regulated Soft Gate Drive

Adjustable Switching Speed for EMI Control

Overmolded Five-Pin Package

ABSOLUTE MAXIMUM RATINGS at TA = +25°C
Control Supply Voltage, VIN . . . . . . . 35 V
Drain-Source Voltage, VDS . . . . . . . . 650 V
Drain Current, ID continuous . . . . . . . 2.7 A
single-pulse, tw ≤ 1 ms . . . . . . . . 7.2 A
Avalanche Energy, EAS single-pulse . . 158 mJ
Over-Current Protection Voltage Range, VOCP . . -0.3 V to +6 V
Insulation RMS Voltage, VWM(RMS) . . . 2000 V
Package Power Dissipation, PD control (VIN x IIN(ON)) . . . . . . . . . 0.8 W
FET Channel Temperature, TJ . . . +150°C
Internal Frame Temperature, TF . . +125°C
Operating Temperature Range, TA . . .-20°C to +125°C
Storage Temperature Range, TS . . . -40°C to +125°C


    Preis: 9.95 €
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