Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.
Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 8 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC Tc=25°C 65 W