Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.420 V at IF = 5 A

FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.

PRIMARY CHARACTERISTICS
IF(AV) 2 x 20 A
VRRM 100 V
IFSM 250 A
VF at IF = 20 A 0.67 V
TJ max. 150 °C


    Preis: 12.95 €
inkl. MwSt. zzgl Versandkosten

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